Can HIPIMS power supply be used as a bias power supply

HIPIMS(High Power Pulse Magnetron Sputtering)power supply can be used as a bias power supply under certain conditions,but there are also some limitations.In principle,HIPIMS power supply can provide high-energy pulses.When used as a bias power source,these pulses can to some extent control the ion bombardment energy and direction.For example,during the thin film deposition process,by adjusting the pulse parameters output by the HIPIMS power supply,ions reaching the substrate surface can obtain specific energy,thereby affecting the microstructure and properties of the thin film.This control of ion energy is similar to the function of a bias power supply,which can change the deposition behavior of ions on the substrate.However,compared to traditional bias power supplies,HIPIMS power supplies have their own unique characteristics.Traditional bias power supplies typically provide stable DC bias,which can continuously and stably attract ions.The HIPIMS power supply outputs pulse signals.This results in the ion bombardment process being pulsed rather than continuous when using HIPIMS power supply as a bias power supply.In some processes that require high stability during ion bombardment,this pulse characteristic may bring some problems.

For example,in the manufacturing process of high-precision electronic devices,it is necessary to control the depth and concentration of ion implantation.If HIPIMS power supply is used as a bias power supply,its pulse characteristics may lead to uneven ion implantation,which in turn affects the performance of electronic devices.Moreover,the pulse parameters of HIPIMS power supply(such as pulse width,pulse frequency,pulse amplitude,etc.)need to be carefully adjusted according to specific application scenarios in order to fully utilize the bias power supply.Otherwise,inappropriate parameter settings may lead to issues such as unstable splash rate and poor film adhesion.In summary,HIPIMS power supply can be used as a bias power supply in certain scenarios where the stability requirements for ion bombardment process are not met,but its pulse characteristics need to be fully considered and the pulse parameters need to be finely adjusted.